SSM3J46CTB Datasheet (Toshiba Semiconductor) - Power Management Switch Applications

SSM3J46CTB, Power Management Switch Applications

SSM3J46CTB www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J46CTB ○ Power Management Switch Applications 0.8±0.05 Unit: mm B A +0.02 0.48 -0.03 1.5 V drive Low ON-resistance:Ron = 250 mΩ (max) (@VGS = -1.5 V) Ron = 178 mΩ (max) (@VGS = -1.8 V) Ron = 133 mΩ (max) (@VGS = -2.5 V) Ron = 103 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power

SSM3J46CTB Features

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