SSM3J46CTB Datasheet - Toshiba Semiconductor

SSM3J46CTB Power Management Switch Applications

SSM3J46CTB www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J46CTB ○ Power Management Switch Applications 0.8±0.05 Unit: mm B A +0.02 0.48 -0.03 1.5 V drive Low ON-resistance:Ron = 250 mΩ (max) (@VGS = -1.5 V) Ron = 178 mΩ (max) (@VGS = -1.8 V) Ron = 133 mΩ (max) (@VGS = -2.5 V) Ron = 103 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power.

SSM3J46CTB Features

* aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used

SSM3J46CTB Datasheet (235.34 KB)

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Datasheet Details

Part number:

SSM3J46CTB

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

235.34 KB

Description:

Power management switch applications.

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