SSM3J56MFV Datasheet - Toshiba Semiconductor

SSM3J56MFV, Silicon P-Channel MOSFET

SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J56MFV ○ Load Switching

Features

* y, serious property damage or serious publ

Applications

* 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Charact

SSM3J56MFV-ToshibaSemiconductor.pdf