Datasheet Specifications
- Part number
- SSM3J56MFV
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 183.61 KB
- Datasheet
- SSM3J56MFV-ToshibaSemiconductor.pdf
- Description
- Silicon P-Channel MOSFET
Description
SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J56MFV ○ Load Switching Applications * * 1.2 V dri.
Features
* y, serious property damage or serious publApplications
* 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) CharactSSM3J56MFV Distributors
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