SSM3J56MFV Datasheet - Toshiba Semiconductor

SSM3J56MFV Silicon P-Channel MOSFET

SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J56MFV ○ Load Switching Applications 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol .

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SSM3J56MFV Datasheet (183.61 KB)

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Datasheet Details

Part number:

SSM3J56MFV

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

183.61 KB

Description:

Silicon p-channel mosfet.

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