SSM3K36TU Datasheet - Toshiba Semiconductor

SSM3K36TU Silicon N-Channel MOSFET

SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36TU ○ High-Speed Switching Applications 1.5-V drive Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) Absolute Maximum Ratings (Ta = 25˚C) 2.0±0.1 0.65±0.05 Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 1 2 3 0.166±0.05 0.7±0.05 Characteristics Symbol R.

SSM3K36TU Datasheet (216.10 KB)