SSM6N43FU Datasheet - Toshiba Semiconductor

SSM6N43FU N-Channel MOSFET

SSM6N43FU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N43FU ○ High-Speed Switching Applications 1.5-V drive Low ON-resistance : RDS(ON) = 1.52 Ω (max) (@VGS = 1.5V) : RDS(ON) = 1.14 Ω (max) (@VGS = 1.8V) : RDS(ON) = 0.85 Ω (max) (@VGS = 2.5V) : RDS(ON) = 0.66 Ω (max) (@VGS = 4.5V) : RDS(ON) = 0.63 Ω (max) (@VGS = 5.0V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1,Q2 Common) Characteristic Drain-source voltage Gate-source voltage Drain current Drain p.

SSM6N43FU Features

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SSM6N43FU Datasheet (195.56 KB)