Datasheet Specifications
- Part number
- TK18A30D
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 223.91 KB
- Datasheet
- TK18A30D-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS (π-MOS) TK18A30D 1.Applications * Switching Voltage Regulators 2..
Features
* (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18A30D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum RaTK18A30D Distributors
📁 Related Datasheet
📌 All Tags