TK18A30D - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK18A30D
Manufacturer	Toshiba ↗ Semiconductor
File Size	223.91 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK18A30D-ToshibaSemiconductor.pdf

(1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18A30D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 300 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed).

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Published: Sep 11, 2014 |