TK18A30D Datasheet, Mosfet, Toshiba Semiconductor

TK18A30D Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3.

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Part number:

TK18A30D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

223.91kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK18A30D Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current:

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TK18A30D

Toshiba Semiconductor

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