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TK18A30D

Silicon N-Channel MOSFET

TK18A30D Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18A30D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ra

TK18A30D Datasheet (223.91 KB)

Preview of TK18A30D PDF

Datasheet Details

Part number:

TK18A30D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

223.91 KB

Description:

Silicon n-channel mosfet.

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TAGS

TK18A30D Silicon N-Channel MOSFET Toshiba Semiconductor

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