Part number:
TK18A30D
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
223.91 KB
Description:
Silicon n-channel mosfet.
TK18A30D-ToshibaSemiconductor.pdf
Datasheet Details
TK18A30D Features
* (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18A30D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ra
TK18A30D-ToshibaSemiconductor.pdf
Datasheet Details
TK18A30D
Toshiba ↗ Semiconductor
223.91 KB
Silicon n-channel mosfet.
TK18A30D Distributor
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