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TK18E10K3

Silicon N-Channel MOSFET

TK18E10K3 Features

* (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18E10K3 1: Gate 2: Dra

TK18E10K3 Datasheet (264.52 KB)

Preview of TK18E10K3 PDF

Datasheet Details

Part number:

TK18E10K3

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

264.52 KB

Description:

Silicon n-channel mosfet.

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TAGS

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