Part number:
TK18E10K3
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
264.52 KB
Description:
Silicon n-channel mosfet.
TK18E10K3-ToshibaSemiconductor.pdf
Datasheet Details
TK18E10K3 Features
* (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18E10K3 1: Gate 2: Dra
TK18E10K3-ToshibaSemiconductor.pdf
Datasheet Details
TK18E10K3
Toshiba ↗ Semiconductor
264.52 KB
Silicon n-channel mosfet.
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