TK18E10K3 Datasheet, Mosfet, Toshiba Semiconductor

TK18E10K3 Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhanc

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Part number:

TK18E10K3

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

264.52kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK18E10K3 Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer

TAGS

TK18E10K3

Toshiba Semiconductor

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