Part number:
TK18E10K3
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
264.52 KB
Description:
Silicon n-channel mosfet.
* (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18E10K3 1: Gate 2: Dra
TK18E10K3 Datasheet (264.52 KB)
TK18E10K3
Toshiba ↗ Semiconductor
264.52 KB
Silicon n-channel mosfet.
📁 Related Datasheet
TK18E10K3 N-Channel MOSFET (INCHANGE)
TK18 Phase Control Thyristor (Dynex Semiconductor)
TK18 Capacitive Touch Key Flash MCU (ene)
TK18.5A Current Transducer (Topstek)
TK1810MK Phase Control Thyristor (Dynex Semiconductor)
TK1812MK Phase Control Thyristor (Dynex Semiconductor)
TK18A30D Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK18A30D N-Channel MOSFET (INCHANGE)
TK18A50D Silicon N-Channel MOSFET (Toshiba)
TK18A50D N-Channel MOSFET (INCHANGE)