Datasheet Specifications
- Part number
- TK18E10K3
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 264.52 KB
- Datasheet
- TK18E10K3-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-channel MOS (U-MOS) TK18E10K3 1.Applications * Switching Voltage Regulators 2..
Features
* (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ. ) (2) High forward transfer admittance: |Yfs| = 28 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18E10K3 1: Gate 2: DraTK18E10K3 Distributors
📁 Related Datasheet
📌 All Tags