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TPC6130

MOSFETs

TPC6130 Features

* (1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 86 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1, 2, 5, 6

TPC6130 Datasheet (219.99 KB)

Preview of TPC6130 PDF

Datasheet Details

Part number:

TPC6130

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

219.99 KB

Description:

Mosfets.
TPC6130 MOSFETs Silicon P-Channel MOS (U-MOS) TPC6130 1. Applications

*

* Lithium-Ion Secondary Batteries Power Management Switches .

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TPC6130 MOSFETs Toshiba Semiconductor

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