TPCA8A01-H Datasheet - Toshiba Semiconductor

TPCA8A01-H N-Channel MOSFET

TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ) TPCA8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.5±0.1 1.27 0.4±0.1 85 Unit: mm 0.05 M A 6.0± 0.3 5.0±0.2 Built-in schottky barrier diode Low forward voltage: VDSF = 0.6 V (max) Small footprint due to a small and thin package High speed switching .

TPCA8A01-H Features

* so refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including w

TPCA8A01-H-ToshibaSemiconductor.pdf