TPCA8A02-H Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-.

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Datasheet Specifications

Part number: TPCA8A02-H
Manufacturer: Toshiba ↗ Semiconductor
File Size: 209.68 KB
Datasheet: TPCA8A02-H-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* Notebook PC Applications Portable Equipment Applications 0.5±0.1 1.27 8 0.4±0.1 5 Unit: mm 0.05 M A
* Built-in a schottky barrier diode 6.0±0.3 High-speed switching Small gate charge: QSW = 8.6 nC (typ. ) Low drain-source ON-res

TPCA8A02-H Distributors

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TPCA8A02-H Silicon N-Channel MOSFET Toshiba Semiconductor

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