TPCA8A02-H Datasheet - Toshiba Semiconductor

TPCA8A02-H Silicon N-Channel MOSFET

TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.5±0.1 1.27 8 0.4±0.1 5 Unit: mm 0.05 M A Built-in a schottky barrier diode 6.0±0.3 High-speed switching Small gate charge: QSW = 8.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 .

TPCA8A02-H Features

* ctor Reliability Handbook” and (b) the instructions for the application with which the Product will be use

TPCA8A02-H-ToshibaSemiconductor.pdf