TPCA8A04-H Datasheet - Toshiba

TPCA8A04-H Silicon N-Channel MOSFET

TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H 0.5 ± 0.1 High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Built-in a schottky barrier diode 6.0 ± 0.3 Unit: mm 0.4 ± 0.1 5 8 1.27 0.05 M A 5.0 ± 0.2 Low forward voltage: VDSF = 0.6 V (max) High-speed switching Small gate charge: .

TPCA8A04-H Features

* corporate the Product into their own applications, customers must also refer to and comply with (a) the latest

TPCA8A04-H_Toshiba.pdf