Datasheet Specifications
- Part number
- TPCA8A09-H
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 250.63 KB
- Datasheet
- TPCA8A09-H-ToshibaSemiconductor.pdf
- Description
- MOSFET
Description
TPCA8A09-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A09-H 1.Applications * * * High-Efficiency D.
Features
* (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 17 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode:TPCA8A09-H Distributors
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