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TPCA8A09-H Datasheet - Toshiba Semiconductor

TPCA8A09-H MOSFET

TPCA8A09-H Features

* (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 17 nC (typ.) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode:

TPCA8A09-H-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPCA8A09-H

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

250.63 KB

Description:

Mosfet.

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TPCA8A09-H TPCA8A09-H MOSFET Toshiba Semiconductor

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