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TPCA8A08-H Silicon N-Channel MOSFET

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Description

TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-.

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Applications

* Notebook PC Applications Portable Equipment Applications
* Built-in a schottky barrier diode Low forward voltage: VDSF =
* 0.6 V (max)
* High-speed switching
* Small gate charge: QSW = 11 nC (typ. )
* Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ. ) (VGS

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