TPCA8A08-H - Silicon N-Channel MOSFET
TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Built-in a schottky barrier diode Low forward voltage: VDSF = 0.6 V (max) High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.) (VGS = 4.5 V) High
