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TPCA8A08-H Datasheet - Toshiba

TPCA8A08-H Silicon N-Channel MOSFET

TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Built-in a schottky barrier diode Low forward voltage: VDSF = 0.6 V (max) High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.) (VGS = 4.5 V) High.

TPCA8A08-H Datasheet (231.39 KB)

Preview of TPCA8A08-H PDF

Datasheet Details

Part number:

TPCA8A08-H

Manufacturer:

Toshiba ↗

File Size:

231.39 KB

Description:

Silicon n-channel mosfet.

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TPCA8A08-H Silicon N-Channel MOSFET Toshiba

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