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TPCA8A10-H Datasheet - Toshiba

TPCA8A10-H Field Effect Transistor

TPCA8A10-H Features

* (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 12 nC (typ.) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode:

TPCA8A10-H_Toshiba.pdf

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Datasheet Details

Part number:

TPCA8A10-H

Manufacturer:

Toshiba ↗

File Size:

279.60 KB

Description:

Field effect transistor.

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TPCA8A10-H TPCA8A10-H Field Effect Transistor Toshiba

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