TPCA8A10-H Field Effect Transistor

Toshiba

Description

TPCA8A10-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A10-H 1.Applications * * * High-Efficiency D.

📥 Download Datasheet

TPCA8A10-H Datasheet Preview — Preview of TPCA8A10-H PDF

Datasheet Specifications

Part number: TPCA8A10-H
Manufacturer: Toshiba ↗
File Size: 279.60 KB
Datasheet: TPCA8A10-H_Toshiba.pdf
Description: Field Effect Transistor

Features

* (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 12 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode:

TPCA8A10-H Distributors

📁 Related Datasheet

TPCA8A11-H TPCA8A01-H TPCA8A02-H TPCA8A09-H TPCA8003-H TPCA8004-H

📌 All Tags

TPCA8A10-H Field Effect Transistor Toshiba

Toshiba TPCA8A10-H-like datasheet