* (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 10 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode:
TPCA8A11-H Datasheet (252.46 KB)
TPCA8A11-H
Toshiba ↗ Semiconductor
252.46 KB
Mosfet.
TPCA8A11-H
MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)
TPCA8A11-H
1. Applications
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* High-Efficiency D.
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