Datasheet4U Logo Datasheet4U.com

TPCP8206

MOSFETs

TPCP8206 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 3: Source 2,

TPCP8206 Datasheet (234.95 KB)

Preview of TPCP8206 PDF

Datasheet Details

Part number:

TPCP8206

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

234.95 KB

Description:

Mosfets.

📁 Related Datasheet

TPCP8201 MOSFET (Toshiba Semiconductor)

TPCP8202 MOSFET (Toshiba Semiconductor)

TPCP8203 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TPCP8204 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TPCP8205-H Silicon N-Channel MOSFET (Toshiba Semiconductor)

TPCP8207 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TPCP8001-H MOSFET (Toshiba Semiconductor)

TPCP8002 MOSFET (Toshiba Semiconductor)

TPCP8003-H MOSFET (Toshiba Semiconductor)

TPCP8004 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

TPCP8206 MOSFETs Toshiba Semiconductor

Image Gallery

TPCP8206 Datasheet Preview Page 2 TPCP8206 Datasheet Preview Page 3

TPCP8206 Distributor