TPCP8901 Datasheet - Toshiba Semiconductor

TPCP8901 Silicon Dual Transistor

TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Switching Applications 0.33±0.05 0.05 M A 8 5 Unit: mm Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = 0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation : PNP VCE (sat) = 0.20 V (max) : NPN VCE (sat) = 0.17 V (max) High-speed switching : PNP tf .

TPCP8901_ToshibaSemiconductor.pdf