TPCP8F01 Datasheet - Toshiba Semiconductor

TPCP8F01 Multi-chip Device Epitaxial Transistor

TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type www.DataSheet4U.com TPCP8F01 2.4±0.1 0.475 1 4 High DC current gain: hFE = 200 to 500 (IC = 0.5 A) (PNP Transistor) Low collector-emitter saturation: VCE (sat) = 0.19 V (max) (PNP Transistor) High-speed switching: tf = 40 ns (typ.) (PNP Transistor) 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 .

TPCP8F01 Features

* BA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TO

TPCP8F01 Datasheet (273.50 KB)