TPCP8F01 Datasheet - Toshiba Semiconductor

TPCP8F01 Multi-chip Device Epitaxial Transistor

TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type www.DataSheet4U.com TPCP8F01 2.4±0.1 0.475 1 4 High DC current gain: hFE = 200 to 500 (IC = 0.5 A) (PNP Transistor) Low collector-emitter saturation: VCE (sat) = 0.19 V (max) (PNP Transistor) High-speed switching: tf = 40 ns (typ.) (PNP Transistor) 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 .

TPCP8F01 Features

* BA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TO

TPCP8F01_ToshibaSemiconductor.pdf