TPCP8H01 Datasheet - Toshiba Semiconductor

TPCP8H01 Multi-chip Device Epitaxial Transistor

TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type www.DataSheet4U.com TPCP8H01 2.4±0.1 0.475 1 4 Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor) Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max) (NPN transistor) High-speed switching: tf = 25 ns (typ.) (NPN transistor) 0.65 2.9±0.1 B A 0.05 M B.

TPCP8H01 Features

* void situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In

TPCP8H01 Datasheet (278.63 KB)