TPCP8H02 Datasheet - Toshiba Semiconductor

TPCP8H02 Multi-chip Transistor

TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 0.33±0.05 0.05 M A 8 5 2.4±0.1 2.8±0.1 Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) (NPN tr.

TPCP8H02_ToshibaSemiconductor.pdf