TPCP8J01 Datasheet - Toshiba Semiconductor

TPCP8J01 Multi-chip Device Epitaxial Transistor

TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type www.DataSheet4U.com TPCP8J01 Notebook PC Applications Portable Equipment Applications Lead(Pb)-Free Small mounting area due to small and thin package Low drain-source ON resistance: P Channel RDS (ON) = 27 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = 10 μA (VDS = .

TPCP8J01 Features

* 1 0.1 1 Drain-source voltage VDS (V) 7 2006-11-17 TPCP8J01 BRT www.DataSheet4U.com 8 2006-11-17 TPCP8J01 www.DataSheet4U.com RESTRICTIONS ON PRODUCT USE

* The information contained herein is subject to change without notice. 20070701-EN

* TOSHIBA is continually working to

TPCP8J01_ToshibaSemiconductor.pdf