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2SC2391 - Silicon NPN Transistor

Features

  • . Output Power : P Q =3W(Min. ) (f=470MHz, V CC=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=15V, P±.
  • : 0.4W, f=470MHz Unit in mm.

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Full PDF Text Transcription

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SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P Q =3W(Min.) (f=470MHz, V CC=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=15V, P±* : 0.4W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 35 Collector-Emitter Voltage VcEO 17 Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) VEBO ic PC 3.5 0.8 7.5 1. EMITTER 2. BASE 3. EMITTER 4.
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