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GT40QR21 Datasheet - Toshiba

GT40QR21 - Silicon N-Channel IGBT

GT40QR21 Features

* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.9 V (typ.) (IC = 40 A

GT40QR21_Toshiba.pdf