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GT40QR21

Silicon N-Channel IGBT

GT40QR21 Features

* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.9 V (typ.) (IC = 40 A

GT40QR21 Datasheet (225.21 KB)

Preview of GT40QR21 PDF

Datasheet Details

Part number:

GT40QR21

Manufacturer:

Toshiba ↗

File Size:

225.21 KB

Description:

Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT GT40QR21 GT40QR21 1. Applications

* Dedicated to Voltage-Resonant Inverter Switching Applications Note.

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GT40QR21 Silicon N-Channel IGBT Toshiba

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