GT40WR21 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.15 µs (typ. ) (IC = 40 A) FWD : trr = 1.0 µs (typ. ) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 2.9 V (typ. ) (IC = 40 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of comme.

📁 GT40WR21 Similar Datasheet

Other Datasheets by Toshiba

Published: Mar 22, 2018 |