Datasheet4U Logo Datasheet4U.com

GT40WR21 Datasheet - Toshiba

GT40WR21 Silicon N-Channel IGBT

GT40WR21 Features

* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.15 µs (typ.) (IC = 40 A) FWD : trr = 1.0 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 2.9 V (typ.) (IC = 40 A)

GT40WR21 Datasheet (381.97 KB)

Preview of GT40WR21 PDF

Datasheet Details

Part number:

GT40WR21

Manufacturer:

Toshiba ↗

File Size:

381.97 KB

Description:

Silicon n-channel igbt.

📁 Related Datasheet

GT400P10 P-Channel Enhancement Mode Power MOSFET (GOFORD)

GT400P10T P-Channel Enhancement Mode Power MOSFET (GOFORD)

GT4050D Photovoltaic bypass module diode (GREATEEN)

GT40G121 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT40J121 Silicon N-Channel IGBT (Toshiba)

GT40J321 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT40J322 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT40M101 SILICON N-CHANNEL IGBT (Toshiba Semiconductor)

GT40M301 Silicon N-Channel MOSFET (Toshiba Semiconductor)

GT40Q321 Silicon N-Channel IGBT (Toshiba Semiconductor)

TAGS

GT40WR21 Silicon N-Channel IGBT Toshiba

Image Gallery

GT40WR21 Datasheet Preview Page 2 GT40WR21 Datasheet Preview Page 3

GT40WR21 Distributor