* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.15 µs (typ.) (IC = 40 A) FWD : trr = 1.0 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 2.9 V (typ.) (IC = 40 A)
GT40WR21 Datasheet (381.97 KB)
GT40WR21
381.97 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT
GT40WR21
GT40WR21
1. Applications (Note)
* Dedicated to Voltage-Resonant Inverter Switching Applicatio.
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