Part number:
GT40J321
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
366.84 KB
Description:
Silicon n-channel igbt
GT40J321 Datasheet (366.84 KB)
GT40J321 Datasheet (366.84 KB)
GT40J321
Toshiba ↗ Semiconductor
366.84 KB
Silicon n-channel igbt
📁 Related Datasheet
GT40J322 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
GT40J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40J322
Current Resonance Inverter Switching Application
• FRD included be.
GT40J121 - Silicon N-Channel IGBT
(Toshiba)
Discrete IGBTs Silicon N-Channel IGBT
GT40J121
1. Applications
• Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-.
GT400P10 - P-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT400P10T
P-Channel Enhancement Mode Power MOSFET
Description
The GT400P10T uses advanced trench technology to
provide excellent RDS(ON) , low gate .
GT400P10T - P-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT400P10T
P-Channel Enhancement Mode Power MOSFET
Description
The GT400P10T uses advanced trench technology to
provide excellent RDS(ON) , low gate .
GT4050D - Photovoltaic bypass module diode
(GREATEEN)
GT4050D
■ Features
■
● ， IF（AV）40A VRRM 50V
● ，。
Outline Dimensions and Mark
■
Marking Code
● GT4050D
■（）
Limiting Values（Absolute Maximum Ra.
GT40G121 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
GT40G121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40G121
The 4th Generation Current Resonance Inverter Switching Applicatio.
