GT40J321 - Silicon N-Channel IGBT
GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.0 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCE
