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GT40J321 Datasheet - Toshiba Semiconductor

GT40J321 Silicon N-Channel IGBT

GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.0 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCE.

GT40J321-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT40J321

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

366.84 KB

Description:

Silicon n-channel igbt.

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GT40J321 GT40J321 Silicon N-Channel IGBT Toshiba Semiconductor