GT40G121 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applicatio.

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Datasheet Specifications

Part number: GT40G121
Manufacturer: Toshiba ↗ Semiconductor
File Size: 139.16 KB
Datasheet: GT40G121-ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Unit: mm
* Enhancement-mode High speed: tf = 0.30 µs (typ. ) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.8 V (typ. ) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Symbol VCES VGES IC ICP PC Tj T

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GT40G121 Silicon N-Channel IGBT Toshiba Semiconductor

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