Datasheet Specifications
- Part number
- GT40Q322
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 116.90 KB
- Datasheet
- GT40Q322_ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel IGBT
Description
GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary www.datasheet4u.com GT40Q322 Unit: mm Voltage Resonance Inver.
Applications
* of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORAGT40Q322 Distributors
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