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GT40Q322 - Silicon N-Channel IGBT

GT40Q322 Description

GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary www.datasheet4u.com GT40Q322 Unit: mm Voltage Resonance Inver.

GT40Q322 Applications

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Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT40Q322-like datasheet