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GT40Q322 Datasheet - Toshiba Semiconductor

GT40Q322 Silicon N-Channel IGBT

GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary www.datasheet4u.com GT40Q322 Unit: mm Voltage Resonance Inverter Switching Application Enhancement-mode High speed : tf = 0.14 µs (typ.) (IC = 40A) FRD included between emitter and collector The 4th generation TO-3P(N) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector curren.

GT40Q322 Datasheet (116.90 KB)

Preview of GT40Q322 PDF

Datasheet Details

Part number:

GT40Q322

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

116.90 KB

Description:

Silicon n-channel igbt.

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GT40Q322 Silicon N-Channel IGBT Toshiba Semiconductor

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