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GT40Q321 Datasheet - Toshiba Semiconductor

GT40Q321 Silicon N-Channel IGBT

GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector curren.

GT40Q321 Datasheet (175.65 KB)

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Datasheet Details

Part number:

GT40Q321

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

175.65 KB

Description:

Silicon n-channel igbt.

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GT40Q321 Silicon N-Channel IGBT Toshiba Semiconductor

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