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GT40J322 Datasheet - Toshiba Semiconductor

GT40J322 Silicon N-Channel IGBT

GT40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J322 Current Resonance Inverter Switching Application FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 1.7 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage DC Collector curr.

GT40J322-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT40J322

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

333.22 KB

Description:

Silicon n-channel igbt.

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GT40J322 GT40J322 Silicon N-Channel IGBT Toshiba Semiconductor

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