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GT40M301 Datasheet - Toshiba Semiconductor

GT40M301 Silicon N-Channel MOSFET

GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 HIGH POWER SWITCHING APPLICATIONS Unit: mm l The 3rd Generation l FRD Included Between Emitter and Collector l Enhancement Mode l High Speed IGBT : tf = 0.25µs (TYP.) FRD : trr = 0.7µs (TYP.) l Low Saturation Voltage : VCE (sat) = 3.4V (MAX.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage Collector Current Emitter Collector Foward.

GT40M301 Datasheet (257.25 KB)

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Datasheet Details

Part number:

GT40M301

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

257.25 KB

Description:

Silicon n-channel mosfet.

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GT40M301 Silicon N-Channel MOSFET Toshiba Semiconductor

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