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GT40M301 - Silicon N-Channel MOSFET

GT40M301 Description

GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 HIGH POWER SWITCHING APPLICATIONS Unit: mm l The 3rd Generat.

GT40M301 Applications

* Unit: mm l The 3rd Generation l FRD Included Between Emitter and Collector l Enhancement
* Mode l High Speed IGBT : tf = 0.25µs (TYP. ) FRD : trr = 0.7µs (TYP. ) l Low Saturation Voltage : VCE (sat) = 3.4V (MAX. ) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector
* Emitter Voltage G

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Silicon N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor GT40M301-like datasheet