GT40M101 SILICON N-CHANNEL IGBT

Toshiba Semiconductor

Description

GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N *CHANNEL IGBT GT40M101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l High Input .

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Datasheet Specifications

Part number: GT40M101
Manufacturer: Toshiba ↗ Semiconductor
File Size: 225.97 KB
Datasheet: GT40M101_ToshibaSemiconductor.pdf
Description: SILICON N-CHANNEL IGBT

Applications

* Unit: mm l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement
* Mode : tf = 0.4µs (Max. ) : VCE(sat) = 3.4V (Max. ) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector
* Emitter Voltage Gate
* Emitter Voltage Collector Current Collector Power Dissipation

GT40M101 Distributors

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GT40M101 SILICON N-CHANNEL IGBT Toshiba Semiconductor

Toshiba Semiconductor GT40M101-like datasheet