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GT40M101 - SILICON N-CHANNEL IGBT

GT40M101 Description

GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N *CHANNEL IGBT GT40M101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l High Input .

GT40M101 Applications

* Unit: mm l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement
* Mode : tf = 0.4µs (Max. ) : VCE(sat) = 3.4V (Max. ) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector
* Emitter Voltage Gate
* Emitter Voltage Collector Current Collector Power Dissipation

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SILICON N-CHANNEL IGBT Toshiba Semiconductor
Toshiba Semiconductor GT40M101-like datasheet