Datasheet Details
Part number:
GT40Q323
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
184.75 KB
Description:
Silicon n-channel igbt.
GT40Q323_ToshibaSemiconductor.pdf
GT40Q323_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT40Q323
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
184.75 KB
Description:
Silicon n-channel igbt.
GT40Q323, Silicon N-Channel IGBT
GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application www.datasheet4u.com Unit: mm Enhancement-mode High speed: tf = 0.14 μs (typ.) (IC = 40A) FRD included between emitter and collector 4th generation TO-3P (N) (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Puls
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