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HN4D01JU Datasheet - Toshiba

HN4D01JU Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN4D01JU HN4D01JU Ultra High Speed Switching Applications z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P .

HN4D01JU Datasheet (217.52 KB)

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Datasheet Details

Part number:

HN4D01JU

Manufacturer:

Toshiba ↗

File Size:

217.52 KB

Description:

Silicon epitaxial planar type diode.

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HN4D01JU Silicon Epitaxial Planar Type Diode Toshiba

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