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HN4D02JU Datasheet - Toshiba

HN4D02JU Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN4D02JU Ultra High Speed Switching Applications Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) HN4D02JU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO .

HN4D02JU Datasheet (230.75 KB)

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Datasheet Details

Part number:

HN4D02JU

Manufacturer:

Toshiba ↗

File Size:

230.75 KB

Description:

Silicon epitaxial planar type diode.

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HN4D02JU Silicon Epitaxial Planar Type Diode Toshiba

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