MG240V1US41 Datasheet (Toshiba) - Silicon N Channel IGBT GTR Module

MG240V1US41, Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG240V1US41 MG240V1US41 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case l High input impedance l Enhancement-mode l High speed : tf = 1.5µs (Max.)(IC = 240A) trr = 0.6µs (Max.)(IF = 240A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C