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SSM3J372R Datasheet - Toshiba

SSM3J372R Silicon P-Channel MOSFET

SSM3J372R Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V) 3. Packagi

SSM3J372R Datasheet (299.78 KB)

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Datasheet Details

Part number:

SSM3J372R

Manufacturer:

Toshiba ↗

File Size:

299.78 KB

Description:

Silicon p-channel mosfet.

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SSM3J372R Silicon P-Channel MOSFET Toshiba

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