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TIM1414-2 Microwave Power GaAs FET

TIM1414-2 Description

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) .

TIM1414-2 Features

* High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz
* High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz
* Broadband internally matched
* Hermetically sealed package RF Performance Specifications (Ta = 25°C) Characteristic Output Power at 1dB Compression Point Power

TIM1414-2 Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended

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Microwave Power GaAs FET Toshiba
Toshiba TIM1414-2-like datasheet