TIM1414-2 - Microwave Power GaAs FET

Name: TIM1414-2
SKU: TIM1414-2-551800

Toshiba

The TIM1414-2 by Toshiba is a Microwave Power GaAs FET. Below is the official datasheet preview.

Datasheet Details

Part number	TIM1414-2
Manufacturer	Toshiba
File Size	496.18 KB
Description	Microwave Power GaAs FET
Datasheet	TIM1414-2_Toshiba.pdf
Additional preview pages of the TIM1414-2 datasheet.

High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz.
High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz.
Broadband internally matched.
Hermetically sealed package RF Performance Speciﬁcations (Ta = 25°C) Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efﬁciency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS x IDS x Rth (c-c) VDS = 9V f = 14.0 - 14.5 GHz A % °C.

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Published: Jul 30, 2006 |