TK25Z60X - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit TK25Z60X TO-247-4L(T) 1. Drain (Heat sink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. ©2016-2017 Toshiba Electron.

📁 TK25Z60X Similar Datasheet

TK25A10K3 - N-Channel MOSFET (Toshiba Semiconductor)
TK25A20D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK25E06K3 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK2019 - STEREO 20W (4OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2050 - STEREO 50W (8OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2051 - STEREO 50W (8ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
TK2070 - STEREO 70W (4Ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
TK20A - Current Transducer (Topstek)

Other Datasheets by Toshiba

Published: Jan 2, 2024 |