TK28V65W - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Low drain-source on-resistance: RDS(ON) = 0.099 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit TK28V65W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise.

📁 TK28V65W Similar Datasheet

TK28N65W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK28N65W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK2019 - STEREO 20W (4OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2050 - STEREO 50W (8OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2051 - STEREO 50W (8ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
TK2070 - STEREO 70W (4Ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
TK20A - Current Transducer (Topstek)
TK20A60U - N-Channel MOSFET (INCHANGE)

Other Datasheets by Toshiba

Published: Jan 2, 2024 |