Datasheet4U.com

TK8Q65W - N-Channel MOSFET

Toshiba

📥 Download Datasheet

TK8Q65W Datasheet Preview — Preview of TK8Q65W PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TK8Q65W
Manufacturer	Toshiba
File Size	264.92 KB
Description	N-Channel MOSFET
Datasheet	TK8Q65W-Toshiba.pdf

TK8Q65W Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.55 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK8Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Not.

📁 TK8Q65W Similar Datasheet

TK8Q60W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK8011 - 1 key touch detector (Tenx)
TK8012 - 2 key touch detector (Tenx)
TK8021 - 1 key touch detector (Tenx)
TK8022 - 2 key touch detector (Tenx)
TK8023 - 3 key touch detector (Tenx)
TK80A04K3L - MOSFETs (Toshiba Semiconductor)
TK80A08K3 - Field Effect Transistor (Toshiba Semiconductor)

Other Datasheets by Toshiba

TK80E06K3A - Silicon N-channel MOS
TK80E07NE - Silicon N Channel MOS Type Field Effect Transistor
TK80E08K3 - N-Channel MOSFET
TK80F04K3L - Silicon N-channel MOS
TK80F06K3L - Silicon N-channel MOS
TK80F08K3 - Silicon N-Channel MOSFET

Published: Oct 4, 2020 |