TK8Q65W Datasheet - Toshiba

TK8Q65W, N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK8Q65W 1.

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.55 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK8Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Ab

TK8Q65W-Toshiba.pdf