TPCC8093 - Field Effect Transistor

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Toshiba

Part number	TPCC8093
Manufacturer	Toshiba
File Size	253.41 KB
Description	Field Effect Transistor
Datasheet	TPCC8093 Datasheet
Additional preview pages of the TPCC8093 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cu.

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Published: Nov 11, 2013 |