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TPCC8093 Field Effect Transistor

TPCC8093 Description

TPCC8093 MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8093 1.Applications * Lithium-Ion Secondary Batteries 2..

TPCC8093 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Sourc

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Field Effect Transistor Toshiba
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