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TPN11003NL Datasheet - Toshiba

TPN11003NL MOSFETs

TPN11003NL Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 12.6 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circui

TPN11003NL-Toshiba.pdf

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Datasheet Details

Part number:

TPN11003NL

Manufacturer:

Toshiba ↗

File Size:

231.21 KB

Description:

Mosfets.

TPN11003NL Distributor

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TPN11003NL TPN11003NL MOSFETs Toshiba