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TPN1110ENH Datasheet - Toshiba

TPN1110ENH Silicon N-channel MOSFET

TPN1110ENH Features

* (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

TPN1110ENH Datasheet (233.37 KB)

Preview of TPN1110ENH PDF

Datasheet Details

Part number:

TPN1110ENH

Manufacturer:

Toshiba ↗

File Size:

233.37 KB

Description:

Silicon n-channel mosfet.

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TPN1110ENH Silicon N-channel MOSFET Toshiba

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