TPN1110ENH Datasheet - Toshiba

TPN1110ENH, Silicon N-channel MOSFET

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1110ENH 1.Applications * High-Efficiency DC-DC Converters * Switching Voltage Regulators .

datasheet Preview Page 1 from Datasheet4u.com

TPN1110ENH-Toshiba.pdf

TPN1110ENH Datasheet Preview — Preview of TPN1110ENH PDF

Datasheet Details

Part number:

TPN1110ENH

Manufacturer:

Toshiba ↗

File Size:

233.37 KB

Description:

Silicon N-channel MOSFET

Features

* (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

Applications

* High-Efficiency DC-DC Converters

TPN1110ENH Distributors

📁 Related Datasheet

TPN3021 TPNA0505S TPNA0509S TPNA0512S TPNA0515S TPNA1205S

📌 All Tags

TPN1110ENH Silicon N-channel MOSFET Toshiba

Toshiba TPN1110ENH-like datasheet