TPN13008NH - MOSFETs
TPN13008NH Features
* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 6.7 nC (typ.) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packag
