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TPN13008NH Datasheet - Toshiba

TPN13008NH MOSFETs

TPN13008NH Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 6.7 nC (typ.) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packag

TPN13008NH-Toshiba.pdf

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Datasheet Details

Part number:

TPN13008NH

Manufacturer:

Toshiba ↗

File Size:

236.34 KB

Description:

Mosfets.

TPN13008NH Distributor

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TPN13008NH TPN13008NH MOSFETs Toshiba