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TPN11006NL Datasheet - Toshiba

TPN11006NL MOSFET

TPN11006NL Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

TPN11006NL-Toshiba.pdf

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Datasheet Details

Part number:

TPN11006NL

Manufacturer:

Toshiba ↗

File Size:

234.05 KB

Description:

Mosfet.

TPN11006NL Distributor

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TPN11006NL TPN11006NL MOSFET Toshiba