TPN11006NL Datasheet - Toshiba

TPN11006NL, MOSFET

TPN11006NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11006NL 1.Applications * * * Switching Voltage Regulators DC-DC Conve.

datasheet Preview Page 1 from Datasheet4u.com

TPN11006NL-Toshiba.pdf

TPN11006NL Datasheet Preview — Preview of TPN11006NL PDF

Datasheet Details

Part number:

TPN11006NL

Manufacturer:

Toshiba ↗

File Size:

234.05 KB

Description:

MOSFET

Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

TPN11006NL Distributors

📁 Related Datasheet

TPN3021 TPNA0505S TPNA0509S TPNA0512S TPNA0515S TPNA1205S

📌 All Tags

TPN11006NL MOSFET Toshiba

Toshiba TPN11006NL-like datasheet