TPN11006NL MOSFET

Toshiba

Description

TPN11006NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11006NL 1.Applications * * * Switching Voltage Regulators DC-DC Conve.

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Datasheet Specifications

Part number: TPN11006NL
Manufacturer: Toshiba ↗
File Size: 234.05 KB
Datasheet: TPN11006NL-Toshiba.pdf
Description: MOSFET

Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

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TPN11006NL MOSFET Toshiba

Toshiba TPN11006NL-like datasheet