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TPN12008QM Datasheet - Toshiba

TPN12008QM, Silicon N-Channel MOSFET

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN12008QM 1.Applications * High-Efficiency DC-DC Converters * Switching Voltage Regulators .
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TPN12008QM-Toshiba.pdf

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Datasheet Details

Part number:

TPN12008QM

Manufacturer:

Toshiba ↗

File Size:

490.57 KB

Description:

Silicon N-Channel MOSFET

Features

* (1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ. ) (3) Small output charge: Qoss = 21.1 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, I

Applications

* High-Efficiency DC-DC Converters
* Switching Voltage Regulators

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