* (1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ.) (3) Small output charge: Qoss = 21.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, I
TPN12008QM Datasheet (490.57 KB)
TPN12008QM
490.57 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN12008QM
1. Applications
* High-Efficiency DC-DC Converters
* Switching Voltage Regulators .
📁 Related Datasheet
TPN1200APL Silicon N-channel MOSFET (Toshiba)
TPN11003NL MOSFETs (Toshiba)
TPN11006NL MOSFET (Toshiba)
TPN11006PL Silicon N-channel MOSFET (Toshiba)
TPN1110ENH Silicon N-channel MOSFET (Toshiba)
TPN13008NH MOSFETs (Toshiba)
TPN14006NH MOSFET (Toshiba)
TPN1600ANH MOSFETs (Toshiba)
TPN1R603PL Silicon N-channel MOSFET (Toshiba)
TPN2010FNH Silicon N-channel MOSFET (Toshiba)
