Datasheet4U Logo Datasheet4U.com

TPN12008QM Datasheet - Toshiba

TPN12008QM Silicon N-Channel MOSFET

TPN12008QM Features

* (1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ.) (3) Small output charge: Qoss = 21.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, I

TPN12008QM-Toshiba.pdf

Preview of TPN12008QM PDF
TPN12008QM Datasheet Preview Page 2 TPN12008QM Datasheet Preview Page 3

Datasheet Details

Part number:

TPN12008QM

Manufacturer:

Toshiba ↗

File Size:

490.57 KB

Description:

Silicon n-channel mosfet.

TPN12008QM Distributor

📁 Related Datasheet

TPN1200APL Silicon N-channel MOSFET (Toshiba)

TPN11003NL MOSFETs (Toshiba)

TPN11006NL MOSFET (Toshiba)

TPN11006PL Silicon N-channel MOSFET (Toshiba)

TPN1110ENH Silicon N-channel MOSFET (Toshiba)

TPN13008NH MOSFETs (Toshiba)

TPN14006NH MOSFET (Toshiba)

TPN1600ANH MOSFETs (Toshiba)

TAGS

TPN12008QM TPN12008QM Silicon N-Channel MOSFET Toshiba