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TPN12008QM Datasheet - Toshiba

TPN12008QM Silicon N-Channel MOSFET

TPN12008QM Features

* (1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ.) (3) Small output charge: Qoss = 21.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, I

TPN12008QM Datasheet (490.57 KB)

Preview of TPN12008QM PDF

Datasheet Details

Part number:

TPN12008QM

Manufacturer:

Toshiba ↗

File Size:

490.57 KB

Description:

Silicon n-channel mosfet.

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TPN12008QM Silicon N-Channel MOSFET Toshiba

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