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TPN11006PL Datasheet - Toshiba

TPN11006PL Silicon N-channel MOSFET

TPN11006PL Features

* (1) High-speed switching (2) Small gate charge: QSW = 5.8 nC (typ.) (3) Small output charge: Qoss = 14.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 8.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I

TPN11006PL-Toshiba.pdf

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Datasheet Details

Part number:

TPN11006PL

Manufacturer:

Toshiba ↗

File Size:

453.36 KB

Description:

Silicon n-channel mosfet.

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TPN11006PL TPN11006PL Silicon N-channel MOSFET Toshiba

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