Datasheet4U Logo Datasheet4U.com

TPN11006PL Datasheet - Toshiba

TPN11006PL - Silicon N-channel MOSFET

TPN11006PL Features

* (1) High-speed switching (2) Small gate charge: QSW = 5.8 nC (typ.) (3) Small output charge: Qoss = 14.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 8.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I

TPN11006PL-Toshiba.pdf

Preview of TPN11006PL PDF
TPN11006PL Datasheet Preview Page 2 TPN11006PL Datasheet Preview Page 3

Datasheet Details

Part number:

TPN11006PL

Manufacturer:

Toshiba ↗

File Size:

453.36 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

📌 All Tags