* (1) High-speed switching (2) Small gate charge: QSW = 5.8 nC (typ.) (3) Small output charge: Qoss = 14.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 8.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I
TPN11006PL Datasheet (453.36 KB)
TPN11006PL
453.36 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11006PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators .
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