TPN11006PL Silicon N-channel MOSFET

Toshiba

Description

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11006PL 1.Applications * High-Efficiency DC-DC Converters * Switching Voltage Regulators .

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Datasheet Specifications

Part number: TPN11006PL
Manufacturer: Toshiba ↗
File Size: 453.36 KB
Datasheet: TPN11006PL-Toshiba.pdf
Description: Silicon N-channel MOSFET

Features

* (1) High-speed switching (2) Small gate charge: QSW = 5.8 nC (typ. ) (3) Small output charge: Qoss = 14.4 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 8.8 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I

Applications

* High-Efficiency DC-DC Converters
* Switching Voltage Regulators

TPN11006PL Distributors

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TPN11006PL Silicon N-channel MOSFET Toshiba

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