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TPN14006NH

MOSFET

TPN14006NH Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 5.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Sour

TPN14006NH Datasheet (226.90 KB)

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Datasheet Details

Part number:

TPN14006NH

Manufacturer:

Toshiba ↗

File Size:

226.90 KB

Description:

Mosfet.
TPN14006NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN14006NH 1. Applications

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* Switching Voltage Regulators Motor Drive.

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TPN14006NH MOSFET Toshiba

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