TPN14006NH Datasheet - Toshiba

TPN14006NH, MOSFET

TPN14006NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN14006NH 1.Applications * * * Switching Voltage Regulators Motor Drive.

Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 5.5 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Sour

TPN14006NH-Toshiba.pdf