TPN1600ANH - MOSFETs

Name: TPN1600ANH
SKU: TPN1600ANH-835936

Toshiba

The TPN1600ANH by Toshiba is a MOSFETs. Below is the official datasheet preview.

Datasheet Details

Part number	TPN1600ANH
Manufacturer	Toshiba
File Size	229.31 KB
Description	MOSFETs
Datasheet	TPN1600ANH-Toshiba.pdf
Additional preview pages of the TPN1600ANH datasheet.

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-so.

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Published: Aug 29, 2014 |