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TPN1600ANH

MOSFETs

TPN1600ANH Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packagi

TPN1600ANH Datasheet (229.31 KB)

Preview of TPN1600ANH PDF

Datasheet Details

Part number:

TPN1600ANH

Manufacturer:

Toshiba ↗

File Size:

229.31 KB

Description:

Mosfets.
TPN1600ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1600ANH 1. Applications

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* DC-DC Converters Switching Voltage Regul.

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TPN1600ANH MOSFETs Toshiba

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