TPN1R603PL Datasheet - Toshiba

TPN1R603PL, Silicon N-channel MOSFET

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1R603PL 1.Applications * High-Efficiency DC-DC Converters * Switching Voltage Regulators .

Features

* (1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ. ) (3) Small output charge: Qoss = 23 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID =

Applications

* High-Efficiency DC-DC Converters
* Switching Voltage Regulators

TPN1R603PL-Toshiba.pdf