TPN2010FNH Datasheet, Mosfet, Toshiba

TPN2010FNH Features

• Mosfet (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max)

PDF File Details

Part number:

TPN2010FNH

Manufacturer:

Toshiba ↗

File Size:

229.44kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TPN2010FNH Application

• Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate c

TAGS

TPN2010FNH

Toshiba

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