Datasheet4U Logo Datasheet4U.com

TPN2010FNH Datasheet - Toshiba

TPN2010FNH Silicon N-channel MOSFET

TPN2010FNH Features

* (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

TPN2010FNH Datasheet (229.44 KB)

Preview of TPN2010FNH PDF

Datasheet Details

Part number:

TPN2010FNH

Manufacturer:

Toshiba ↗

File Size:

229.44 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

TPN22006NH MOSFET (Toshiba)

TPN2R203NC Field Effect Transistor (Toshiba)

TPN2R304PL Silicon N-channel MOSFET (Toshiba)

TPN2R503NC MOSFET (Toshiba)

TPN2R703NL Silicon N-channel MOSFET (Toshiba)

TPN2R805PL Silicon N-channel MOSFET (Toshiba)

TPN2R903PL Silicon N-channel MOSFET (Toshiba)

TPN11003NL MOSFETs (Toshiba)

TPN11006NL MOSFET (Toshiba)

TPN11006PL Silicon N-channel MOSFET (Toshiba)

TAGS

TPN2010FNH Silicon N-channel MOSFET Toshiba

Image Gallery

TPN2010FNH Datasheet Preview Page 2 TPN2010FNH Datasheet Preview Page 3

TPN2010FNH Distributor