TPN2010FNH Silicon N-channel MOSFET

Toshiba

Description

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN2010FNH 1.Applications * High-Efficiency DC-DC Converters * Switching Voltage Regulators .

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Datasheet Specifications

Part number: TPN2010FNH
Manufacturer: Toshiba ↗
File Size: 229.44 KB
Datasheet: TPN2010FNH-Toshiba.pdf
Description: Silicon N-channel MOSFET

Features

* (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

Applications

* High-Efficiency DC-DC Converters

TPN2010FNH Distributors

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TPN2010FNH Silicon N-channel MOSFET Toshiba

Toshiba TPN2010FNH-like datasheet