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TPN2010FNH - Silicon N-channel MOSFET

Toshiba

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Datasheet Details

Part number	TPN2010FNH
Manufacturer	Toshiba
File Size	229.44 KB
Description	Silicon N-channel MOSFET
Datasheet	TPN2010FNH-Toshiba.pdf

TPN2010FNH Product details

Features

(1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN2010FNH TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1 2013-10-22 Rev.1.0 TPN2010FNH 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symb.

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Published: Mar 7, 2015 |